Investigating the thermally induced p-n transition in reduced graphene oxide layers exposed to hydrogen sulfide - Université Clermont Auvergne Access content directly
Journal Articles Sensors and Actuators B: Chemical Year : 2024

Investigating the thermally induced p-n transition in reduced graphene oxide layers exposed to hydrogen sulfide

Abstract

To investigate the origin of the p-n transition observed in graphene-based materials for chemical sensors, we developed sensing layers made of chemically reduced graphene oxide (rGO), prepared from graphene oxide (GO) using citrate as a reducing agent. We focused mainly on the thermally induced p-n transition when the sensing layers are exposed to H2S at a specific temperature. The rGO sensing layers are prepared through drop casting on interdigitated electrodes. Scanning electron and transmission electron microscopes allow the characterization of the rGO structure, while FTIR, X-ray photoelectron spectroscopy, and electrical characterization have revealed the reduction efficiency. The p-n transition occurs between 80 °C and 90 °C, whatever the resistance range and the exposition history to H2S. The temperature-dependent transition, which starts around 80–90 °C, is reversible if the temperature is kept below 80 °C, i.e., the rGO remains p-type material. When experiments are performed at a temperature above 90 °C, the transition from p-type to n-type takes place, and the n-type persists, showing an irreversible transition. The transition starts gradually at 80 °C during lower concentration exposure and ends at high concentration. Finally, the results show that temperature and H2S contribute to the inversion of the initial charge carriers.
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Year Month Jours
Avant la publication
Wednesday, September 11, 2024
Embargoed file
Wednesday, September 11, 2024
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Dates and versions

hal-04567736 , version 1 (03-05-2024)

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Elisa Ruiz, Christelle Varenne, Bruno de Lima, Thiaka Gueye, Alain Pauly, et al.. Investigating the thermally induced p-n transition in reduced graphene oxide layers exposed to hydrogen sulfide. Sensors and Actuators B: Chemical, 2024, 409, pp.135611. ⟨10.1016/j.snb.2024.135611⟩. ⟨hal-04567736⟩
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