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Journal Articles Nano Futures Year : 2020

Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates

Geoffrey Avit
Jihen Jridi
  • Function : Author
Catherine Bougerol
Pierre-Marie Coulon
  • Function : Author
  • PersonId : 771696
  • IdRef : 178706329
Dominique Castelluci
  • Function : Author
  • PersonId : 1038403
Evelyne Gil
Philip Shields
Agnes Trassoudaine
  • Function : Author
  • PersonId : 1024787

Abstract

Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy (HVPE) on patterned GaN/c-Al2O3 templates. It is shown that these voids shape, due to a high lattice mismatch between InN and GaN materials, starts from the base and extends up to a half of the total length of the nanorods. When the effect of the mismatch between substrate and nanorods becomes weaker, the hollow nanotubes close up at the top and further growth proceeds in the standard nanowire geometry without voids. This effect is observed within a wide range of growth conditions during the InN synthesis and must be taken into account for controlling the final structure of InN nanorods for different device applications.
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Dates and versions

hal-02992214 , version 1 (06-11-2020)

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Mohammed Zeghouane, Yamina Andre, Geoffrey Avit, Jihen Jridi, Catherine Bougerol, et al.. Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates. Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩. ⟨hal-02992214⟩
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